BSS84, MOSFET P-CH 50V 130MA SOT23-3
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см. техническую документацию
см. техническую документацию
88 ֏
Кратность заказа 10 шт.
от 100 шт. —
75 ֏
от 500 шт. —
58 ֏
от 3000 шт. —
47 ֏
10 шт.
на сумму 880 ֏
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Описание
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 130 mA |
| Maximum Drain Source Resistance | 10 Ω |
| Maximum Drain Source Voltage | 50 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 250 mW |
| Minimum Gate Threshold Voltage | 0.8V |
| Minimum Operating Temperature | -65 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Width | 1.4mm |
| Typical Gate Charge @ Vgs | 0.9 nC @ 5 V |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 6.3 ns |
| Forward Transconductance - Min: | 0.6 S |
| Id - Continuous Drain Current: | 130 mA |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-23-3 |
| Part # Aliases: | BSS84_NL |
| Pd - Power Dissipation: | 360 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Qg - Gate Charge: | 1.3 nC |
| Rds On - Drain-Source Resistance: | 10 Ohms |
| Rise Time: | 6.3 ns |
| Series: | BSS84 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 10 ns |
| Typical Turn-On Delay Time: | 2.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |