IRFZ44ZS
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Описание
Электроэлемент
MOSFET, N-CH, 55V, 51A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 51 |
| Maximum Drain Source Resistance - (mOhm) | 13.9@10V |
| Maximum Drain Source Voltage - (V) | 55 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Power Dissipation - (mW) | 80000 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~175 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Process Technology | HEXFET |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| Typical Gate Charge @ 10V - (nC) | 29 |
| Typical Gate Charge @ Vgs - (nC) | 29@10V |
| Typical Input Capacitance @ Vds - (pF) | 1420@25V |
| Вес, г | 2.55 |
Техническая документация
Документация
pdf, 391 КБ