FDC6561AN, MOSFET 2N-CH 30V 2.5A SSOT6
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Описание
The FDC6561AN is a dual N-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for all applications where small size is desirable but especially DC-to-DC conversion in battery powered systems.
• Low gate charge
• Very fast switching
• Small footprint
• Low profile
Технические параметры
| Количество Выводов | 6вывод(-ов) |
| Максимальная Рабочая Температура | 150 C |
| Монтаж транзистора | Surface Mount |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 30В |
| Непрерывный Ток Стока | 2.5А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 1.8В |
| Рассеиваемая Мощность | 960мВт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.082Ом |
| Стиль Корпуса Транзистора | SuperSOT |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Channel Mode | Enhancement |
| Continuous Drain Current | 2.5(A) |
| Drain-Source On-Volt | 30(V) |
| Gate-Source Voltage (Max) | '±20(V) |
| Mounting | Surface Mount |
| Number of Elements | 2 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | TSOT-23 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Polarity | N |
| Power Dissipation | 0.96(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Channel Type | N |
| Maximum Continuous Drain Current | 2.5 A |
| Maximum Drain Source Resistance | 152 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 960 mW |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Series | PowerTrench |
| Transistor Configuration | Isolated |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 2.3 nC @ 5 V |
| Width | 1.7mm |
| Case | SuperSOT-6 |
| Drain current | 2.5A |
| Drain-source voltage | 30V |
| Gate charge | 3.2nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | ONSEMI |
| On-state resistance | 152mΩ |
| Polarisation | unipolar |
| Technology | PowerTrench® |
| Type of transistor | N-MOSFET x2 |
Техническая документация
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