FDN360P, MOSFET P-CH 30V 2A SUPERSOT3
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
251 ֏
Кратность заказа 10 шт.
от 100 шт. —
203 ֏
от 500 шт. —
159 ֏
от 3000 шт. —
125 ֏
10 шт.
на сумму 2 510 ֏
Альтернативные предложения1
Описание
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density.
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 13 ns |
| Forward Transconductance - Min | 5 S |
| Height | 1.12 mm |
| Id - Continuous Drain Current | -2 A |
| Length | 2.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SSOT-3 |
| Packaging | Reel |
| Part # Aliases | FDN360P_NL |
| Pd - Power Dissipation | 500 mW(1/2 W) |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 63 mOhms |
| Rise Time | 13 ns |
| RoHS | Details |
| Series | FDN360P |
| Technology | Si |
| Tradename | PowerTrench |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 11 ns |
| Typical Turn-On Delay Time | 6 ns |
| Unit Weight | 0.001058 oz |
| Vds - Drain-Source Breakdown Voltage | -30 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 1.4 mm |
| Channel Type | P |
| Maximum Continuous Drain Current | 2 A |
| Maximum Drain Source Resistance | 80 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Power Dissipation | 500 mW |
| Minimum Gate Threshold Voltage | 1V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 6.2 nC @ 10 V |
| Вес, г | 1 |