FDS86242, MOSFET N-CH 150V 4.1A 8SOIC
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см. техническую документацию
см. техническую документацию
750 ֏
Мин. кол-во для заказа 2 шт.
от 10 шт. —
620 ֏
от 100 шт. —
449 ֏
от 500 шт. —
409 ֏
2 шт.
на сумму 1 500 ֏
Описание
Полевые МОП-транзисторы Fairchild PowerTrench
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 10 ns |
| Forward Transconductance - Min: | 11 S |
| Id - Continuous Drain Current: | 20 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOIC-8 |
| Pd - Power Dissipation: | 5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 4.9 nC |
| Rds On - Drain-Source Resistance: | 56.3 mOhms |
| Rise Time: | 10 ns |
| Series: | FDS86242 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | N-Channel Power Trench MOSFET |
| Typical Turn-Off Delay Time: | 23 ns |
| Typical Turn-On Delay Time: | 16 ns |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
Техническая документация
Datasheet
pdf, 436 КБ