2SA2016-TD-E, TRANS PNP 50V 7A PCP
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см. техническую документацию
см. техническую документацию
530 ֏
Мин. кол-во для заказа 2 шт.
от 10 шт. —
414 ֏
от 100 шт. —
326 ֏
от 500 шт. —
278 ֏
2 шт.
на сумму 1 060 ֏
Описание
50V 3.5W 200@500mA,2V 7A PNP SOT-89-3 Bipolar Transistors - BJT ROHS
Технические параметры
| Collector Current (Ic) | 7A |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 240mV@2A, 40mA |
| DC Current Gain (hFE@Ic,Vce) | 200@500mA, 2V |
| Operating Temperature | - |
| Power Dissipation (Pd) | 3.5W |
| Transistor Type | PNP |
| Transition Frequency (fT) | 290MHz |
| Brand: | onsemi |
| Collector- Base Voltage VCBO: | 100 V |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 240 mV |
| Configuration: | Single |
| Continuous Collector Current: | 7 A |
| DC Collector/Base Gain hfe Min: | 200 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: | 1000 |
| Gain Bandwidth Product fT: | 330 MHz |
| Manufacturer: | onsemi |
| Maximum DC Collector Current: | 7 A |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-89-3 |
| Pd - Power Dissipation: | 3.5 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Вес, г | 1 |