2N5195G, Тиристор TO-225
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см. техническую документацию
см. техническую документацию
970 ֏
от 10 шт. —
660 ֏
от 30 шт. —
620 ֏
1 шт.
на сумму 970 ֏
Технические параметры
| Brand: | onsemi |
| Collector- Base Voltage VCBO: | 80 V |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| Collector-Emitter Saturation Voltage: | 1.4 V |
| Configuration: | Single |
| Continuous Collector Current: | 4 A |
| DC Collector/Base Gain hFE Min: | 20 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Gain Bandwidth Product fT: | 2 MHz |
| Manufacturer: | onsemi |
| Maximum DC Collector Current: | 4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-225-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 40 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | 2N5195 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Maximum Collector Base Voltage | 80 V |
| Maximum Collector Emitter Voltage | 80 V |
| Maximum DC Collector Current | 4 A |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Frequency | 1 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 40 W |
| Minimum DC Current Gain | 20 |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-225AA |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | PNP |
| Вес, г | 0.1 |