IXTP10P50P, Транзистор P-МОП, полевой, 500В 10A 300Вт 1Ом TO220AB
Описание
500V 10A 300W 1Ω@5A,10V 4V@250uA P Channel TO-220-3 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 10A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1Ω@5A, 10V |
| Drain Source Voltage (Vdss) | 500V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Input Capacitance (Ciss@Vds) | 2.84nF@25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 300W |
| Total Gate Charge (Qg@Vgs) | 50nC@10V |
| Type | P Channel |
| Вес, г | 2.06 |
Техническая документация
Littelfuse/IXYS IXTP10P50P
pdf, 175 КБ