FZT790ATA, Транзистор: PNP
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
930 ֏
от 10 шт. —
580 ֏
от 30 шт. —
471 ֏
от 100 шт. —
398 ֏
1 шт.
на сумму 930 ֏
Описание
40V 2W 300@10mA,2V 3A PNP SOT-223 Bipolar Transistors - BJT ROHS
Технические параметры
| Collector Current (Ic) | 3A |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@2A, 50mA |
| DC Current Gain (hFE@Ic,Vce) | 300@10mA, 2V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 2W |
| Transistor Type | PNP |
| Transition Frequency (fT) | 100MHz |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Type | PNP |
| Product Category | Bipolar Power |
| Material | Si |
| Configuration | Single Dual Collector |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Base Emitter Saturation Voltage (V) | 1@10mA@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@5mA@500mA|0.75@50mA@2A|0.45@10mA@1A |
| Maximum DC Collector Current (A) | 3 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Minimum DC Current Gain | 250@500mA@2V|150@2A@2V|300@10mA@2V|200@1A@2V |
| Maximum Power Dissipation (mW) | 2000 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | Yes |
| AEC Qualified Number | AEC-Q101 |
| Pin Count | 4 |
| Supplier Package | SOT-223 |
| Standard Package Name | SOT-223 |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 1.65(Max) |
| Package Length | 6.7(Max) |
| Package Width | 3.7(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Lead Shape | Gull-wing |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 50 V |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 400 mV |
| Configuration: | Single |
| Continuous Collector Current: | -3 A |
| DC Current Gain hFE Max: | 300 |
| Emitter- Base Voltage VEBO: | 7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Gain Bandwidth Product fT: | 100 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Pd - Power Dissipation: | 2 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | FZT790 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 601 КБ
Datasheet FZT790ATA
pdf, 552 КБ