FDN5632N-F085, Транзистор: N-MOSFET; полевой; 60В; 1,7А; 1,1Вт; SuperSOT-3
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см. техническую документацию
см. техническую документацию
750 ֏
от 10 шт. —
484 ֏
от 30 шт. —
370 ֏
от 100 шт. —
309 ֏
1 шт.
на сумму 750 ֏
Описание
60V 1.7A 57mΩ@10V,1.7A 1.1W 3V@250uA N Channel SOT-23-3 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 1.7A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 57mΩ@10V, 1.7A |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Input Capacitance (Ciss@Vds) | 475pF@15V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF@15V |
| Total Gate Charge (Qg@Vgs) | 12nC@10V |
| Type | N Channel |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 1.3 ns |
| Id - Continuous Drain Current: | 1.6 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SSOT-3 |
| Part # Aliases: | FDN5632N_F085 |
| Pd - Power Dissipation: | 1.1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Qg - Gate Charge: | 12 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 98 mOhms |
| Rise Time: | 1.7 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | Power Trench MOSFET |
| Typical Turn-Off Delay Time: | 5.2 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.03 |