FDMS8D8N15C, Транзистор: N-MOSFET
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
3 440 ֏
от 10 шт. —
2 690 ֏
от 30 шт. —
2 300 ֏
от 100 шт. —
2 020 ֏
1 шт.
на сумму 3 440 ֏
Описание
Power-56 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | - |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | - |
| Drain Source Voltage (Vdss) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Input Capacitance (Ciss@Vds) | - |
| Power Dissipation (Pd) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |
| Type | - |
| Brand: | onsemi |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 5 ns |
| Forward Transconductance - Min: | 120 S |
| Id - Continuous Drain Current: | 85 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PQFN-8 |
| Pd - Power Dissipation: | 132 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 50 nC |
| Rds On - Drain-Source Resistance: | 8.8 mOhms |
| Rise Time: | 19 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 30 ns |
| Typical Turn-On Delay Time: | 23 ns |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 0.01 |