IXXH75N60C3D1, Транзистор IGBT, GenX3™, 600В, 75А, 750Вт, TO247-3
6 400 ֏
от 10 шт. —
5 400 ֏
от 30 шт. —
4 580 ֏
1 шт.
на сумму 6 400 ֏
Описание
750W 150A 600V PT(穿通型) TO-247AD IGBTs ROHS
Технические параметры
| Collector Current (Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Diode Reverse Recovery Time (Trr) | 25ns |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V, 60A |
| Input Capacitance (Cies@Vce) | - |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Power Dissipation (Pd) | 750W |
| Pulsed Collector Current (Icm) | 300A |
| Total Gate Charge (Qg@Ic,Vge) | 107nC |
| Turn?off Delay Time (Td(off)) | 90ns |
| Turn?off Switching Loss (Eoff) | 0.8mJ |
| Turn?on Delay Time (Td(on)) | 35ns |
| Turn?on Switching Loss (Eon) | 1.6mJ |
| Type | PT(穿通型) |
| Вес, г | 6 |
Техническая документация
Datasheet IXXH75N60C3D1
pdf, 189 КБ