DMP21D0UFB4-7B, 20V 770mA 495mOhm@4.5V,400mA 430mW 700mV@250uA P Channel X2-DFN1006-3 MOSFETs
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168 ֏
Кратность заказа 5 шт.
от 50 шт. —
102 ֏
от 150 шт. —
84 ֏
от 500 шт. —
73 ֏
5 шт.
на сумму 840 ֏
Описание
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
| Brand | Diodes Incorporated |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 10000 |
| Fall Time | 18.5 ns |
| Forward Transconductance - Min | 50 mS |
| Id - Continuous Drain Current | 770 mA |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number Of Channels | 1 Channel |
| Package / Case | X2-DFN1006-3 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 990 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 1.5 nC |
| Rds On - Drain-Source Resistance | 495 mOhms |
| Rise Time | 8 ns |
| Series | DMP21 |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 31.7 ns |
| Typical Turn-On Delay Time | 7.1 ns |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | 4.5 V |
| Vgs Th - Gate-Source Threshold Voltage | 700 mV |
| Automotive | No |
| Channel Type | P |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | No Lead |
| Maximum Continuous Drain Current (A) | 1.17 |
| Maximum Drain Source Resistance (mOhm) | 495@4.5V |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Gate Threshold Voltage (V) | 0.7(Typ) |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 990 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Standard Package Name | DFN |
| Supplier Package | X2-DFN |
| Supplier Temperature Grade | Automotive |
| Typical Fall Time (ns) | 18.5 |
| Typical Gate Charge @ Vgs (nC) | 1.5@8V|1@4.5V |
| Typical Input Capacitance @ Vds (pF) | 76.5@10V |
| Typical Rise Time (ns) | 8 |
| Typical Turn-Off Delay Time (ns) | 31.7 |
| Typical Turn-On Delay Time (ns) | 7.1 |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 10000 |
| Fall Time: | 18.5 ns |
| Forward Transconductance - Min: | 50 mS |
| Id - Continuous Drain Current: | 770 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | X2-DFN1006-3 |
| Pd - Power Dissipation: | 990 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 1.5 nC |
| Rds On - Drain-Source Resistance: | 495 mOhms |
| Rise Time: | 8 ns |
| Series: | DMP21 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 31.7 ns |
| Typical Turn-On Delay Time: | 7.1 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 700 mV |
| Вес, г | 0.05 |