FDS86540, SO-8 MOSFETs ROHS
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см. техническую документацию
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3 440 ֏
1 шт.
на сумму 3 440 ֏
Описание
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 18 A |
Maximum Drain Source Resistance | 7 mΩ |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 5 W |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOIC |
Pin Count | 8 |
Series | PowerTrench |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 65 nC @ 10 V |
Width | 3.9mm |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Id - Continuous Drain Current: | 18 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOIC-8 |
Pd - Power Dissipation: | 5 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 90 nC |
Rds On - Drain-Source Resistance: | 4.5 mOhms |
Series: | FDS86540 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | PowerTrench |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Вес, г | 0.14 |