FDS86540, SO-8 MOSFETs ROHS

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Номенклатурный номер: 8017646735

Описание

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.

Технические параметры

Channel Mode Enhancement
Channel Type N
Maximum Continuous Drain Current 18 A
Maximum Drain Source Resistance 7 mΩ
Maximum Drain Source Voltage 60 V
Maximum Gate Source Voltage -20 V, +20 V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 5 W
Minimum Gate Threshold Voltage 2V
Minimum Operating Temperature -55 °C
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type SOIC
Pin Count 8
Series PowerTrench
Transistor Configuration Single
Transistor Material Si
Typical Gate Charge @ Vgs 65 nC @ 10 V
Width 3.9mm
Brand: onsemi/Fairchild
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 2500
Id - Continuous Drain Current: 18 A
Manufacturer: onsemi
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: SOIC-8
Pd - Power Dissipation: 5 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 90 nC
Rds On - Drain-Source Resistance: 4.5 mOhms
Series: FDS86540
Subcategory: MOSFETs
Technology: Si
Tradename: PowerTrench
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Вес, г 0.14

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 256 КБ
Datasheet FDS86540
pdf, 360 КБ