DMP21D0UT-7, Транзисторы и сборки MOSFET SOT523
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
137 ֏
Кратность заказа 5 шт.
от 50 шт. —
84 ֏
от 150 шт. —
71 ֏
от 500 шт. —
61 ֏
5 шт.
на сумму 685 ֏
Описание
20V 590mA 495mΩ@4.5V,400mA 240mW 700mV@250uA P Channel SOT-523 MOSFETs ROHS
Технические параметры
Continuous Drain Current (Id) | 590mA |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 495mΩ@4.5V, 400mA |
Drain Source Voltage (Vdss) | 20V |
Gate Threshold Voltage (Vgs(th)@Id) | 700mV@250uA |
Input Capacitance (Ciss@Vds) | 80pF@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
Power Dissipation (Pd) | 240mW |
Total Gate Charge (Qg@Vgs) | 1.54nC@8V |
Type | P Channel |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.21.00.95 |
Product Category | Power MOSFET |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | P |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 20 |
Maximum Gate Source Voltage (V) | ±8 |
Maximum Gate Threshold Voltage (V) | 0.7(Typ) |
Maximum Continuous Drain Current (A) | 0.65 |
Maximum Gate Source Leakage Current (nA) | 10000 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (mOhm) | 495@4.5V |
Typical Gate Charge @ Vgs (nC) | 1@4.5V|1.5@8V |
Typical Input Capacitance @ Vds (pF) | 76.5@10V |
Maximum Power Dissipation (mW) | 330 |
Typical Fall Time (ns) | 18.5 |
Typical Rise Time (ns) | 8 |
Typical Turn-Off Delay Time (ns) | 31.7 |
Typical Turn-On Delay Time (ns) | 7.1 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Automotive | Yes |
AEC Qualified Number | AEC-Q101 |
Pin Count | 3 |
Supplier Package | SOT-523 |
Standard Package Name | SOT |
Military | No |
Mounting | Surface Mount |
Package Height | 0.75 |
Package Length | 1.6 |
Package Width | 0.8 |
PCB changed | 3 |
Lead Shape | Gull-wing |
Base Product Number | DMP21 -> |
Current - Continuous Drain (Id) @ 25В°C | 590mA (Ta) |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
ECCN | EAR99 |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 1.54nC @ 8V |
HTSUS | 8541.21.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 10V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | SOT-523 |
Power Dissipation (Max) | 240mW (Ta) |
Rds On (Max) @ Id, Vgs | 495mOhm @ 400mA, 4.5V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | SOT-523 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±8V |
Vgs(th) (Max) @ Id | 700mV @ 250ВµA |
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 18.5 ns |
Forward Transconductance - Min: | 50 mS |
Id - Continuous Drain Current: | 590 mA |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | SOT-523-3 |
Pd - Power Dissipation: | 240 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 1.5 nC |
Rds On - Drain-Source Resistance: | 495 mOhms |
Rise Time: | 8 ns |
Series: | DMP21 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 31.7 ns |
Typical Turn-On Delay Time: | 7.1 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage: | 700 mV |
Вес, г | 1 |
Техническая документация
Datasheet DMP21D0UT-7
pdf, 164 КБ
Datasheet DMP21D0UT-7
pdf, 160 КБ