DMN3016LFDE-7, Транзистор: N-MOSFET
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Описание
30V 10A 12mΩ@10V,11A 730mW 2V@250uA N Channel UDFN2020-6-EP MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 10A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 12mΩ@10V, 11A |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Power Dissipation (Pd) | 730mW |
| Type | N Channel |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 5.6 ns |
| Id - Continuous Drain Current: | 10 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DFN-2020-6 |
| Pd - Power Dissipation: | 2.02 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | Enhancement Mode MOSFETs |
| Qg - Gate Charge: | 25.1 nC |
| Rds On - Drain-Source Resistance: | 16 mOhms |
| Rise Time: | 16.5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | Enhancement Mode MOSFET |
| Typical Turn-Off Delay Time: | 26.1 ns |
| Typical Turn-On Delay Time: | 4.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 536 КБ
Datasheet DMN3016LFDE-7
pdf, 266 КБ