DMN5L06VAK-7, Транзистор: N-MOSFET
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Описание
50V 280mA 2Ω@5V,50mA 250mW 1V@250uA 2 N-Channel SOT-563 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 280mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2Ω@5V, 50mA |
| Drain Source Voltage (Vdss) | 50V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Input Capacitance (Ciss@Vds) | 50pF@25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 250mW |
| Type | 2 N-Channel |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 280 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | SOT-563-6 |
| Pd - Power Dissipation: | 250 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Rds On - Drain-Source Resistance: | 2 Ohms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 1 |