DMN10H100SK3-13, Транзистор: N-MOSFET
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см. техническую документацию
см. техническую документацию
660 ֏
от 10 шт. —
379 ֏
от 30 шт. —
317 ֏
от 100 шт. —
256 ֏
1 шт.
на сумму 660 ֏
Описание
DMNxx MOSFETs Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.
Технические параметры
| Continuous Drain Current (Id) | 18A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 80mΩ@3.3A, 10V |
| Drain Source Voltage (Vdss) | 100V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Input Capacitance (Ciss@Vds) | 1.172nF@50V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 37W |
| Total Gate Charge (Qg@Vgs) | 25.2nC@10V |
| Type | N Channel |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 7.3 ns |
| Id - Continuous Drain Current: | 18 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DPAK-3(TO-252-3) |
| Pd - Power Dissipation: | 37 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 25.2 nC |
| Rds On - Drain-Source Resistance: | 100 mOhms |
| Rise Time: | 5.9 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 20 ns |
| Typical Turn-On Delay Time: | 5.4 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.53 |
Техническая документация
Datasheet
pdf, 536 КБ