DMN2005LPK-7, Транзистор N-MOSFET, полевой, 20В, 0,44А, 0,45Вт, DFN1006-3
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Описание
Описание Транзистор N-MOSFET, полевой, 20В, 0,44А, 0,45Вт, DFN1006-3 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Base Product Number | DMN2005 -> |
| Current - Continuous Drain (Id) @ 25В°C | 440mA (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| HTSUS | 8541.21.0095 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -65В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 3-UFDFN |
| Power Dissipation (Max) | 450mW (Ta) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 10mA, 4V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | 3-X1DFN1006 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±10V |
| Vgs(th) (Max) @ Id | 1.2V @ 100ВµA |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 440 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | X1-DFN1006-3 |
| Pd - Power Dissipation: | 450 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Rds On - Drain-Source Resistance: | 1.5 Ohms |
| Series: | DMN2005 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 530 mV |
| Вес, г | 0.02 |
Техническая документация
Datasheet
pdf, 424 КБ
Datasheet DMN2005LPK-7
pdf, 456 КБ