FDP33N25, Транзистор: N-MOSFET
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см. техническую документацию
см. техническую документацию
2 510 ֏
от 10 шт. —
1 810 ֏
от 30 шт. —
1 560 ֏
от 100 шт. —
1 190 ֏
1 шт.
на сумму 2 510 ֏
Описание
250V 33A 94mΩ@10V,16.5A 235W 5V@250uA N Channel TO-220 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 33A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 94mΩ@10V, 16.5A |
| Drain Source Voltage (Vdss) | 250V |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
| Input Capacitance (Ciss@Vds) | 2.135nF@25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 235W |
| Total Gate Charge (Qg@Vgs) | 48nC@10V |
| Type | N Channel |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Fall Time: | 120 ns |
| Forward Transconductance - Min: | 26.6 S |
| Id - Continuous Drain Current: | 33 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 235 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 48 nC |
| Rds On - Drain-Source Resistance: | 94 mOhms |
| REACH - SVHC: | Details |
| Rise Time: | 230 ns |
| Series: | FDP33N25 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 75 ns |
| Typical Turn-On Delay Time: | 35 ns |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 1.95 |
Техническая документация
Datasheet
pdf, 479 КБ
Datasheet FDP33N25
pdf, 478 КБ