FDC6333C, MOSFET N/P-CH 30V 2.5A/2A SSOT6
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см. техническую документацию
см. техническую документацию
308 ֏
Кратность заказа 10 шт.
от 100 шт. —
247 ֏
от 500 шт. —
185 ֏
от 3000 шт. —
166 ֏
10 шт.
на сумму 3 080 ֏
Описание
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density.
Технические параметры
| Case | SuperSOT-6 |
| Drain current | 2.5/2A |
| Drain-source voltage | 30/-30V |
| Gate charge | 6.6/5.7nC |
| Gate-source voltage | ±16V, ±25V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Kind of transistor | complementary pair |
| Manufacturer | ONSEMI |
| Mounting | SMD |
| On-state resistance | 150/220mΩ |
| Polarisation | unipolar |
| Power dissipation | 0.96W |
| Technology | PowerTrench® |
| Type of transistor | N/P-MOSFET |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 6 ns, 13 ns |
| Forward Transconductance - Min: | 7 S, 3 S |
| Id - Continuous Drain Current: | 2.5 A, 2 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SSOT-6 |
| Part # Aliases: | FDC6333C_NL |
| Pd - Power Dissipation: | 960 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Qg - Gate Charge: | 6.6 nC, 5.7 nC |
| Rds On - Drain-Source Resistance: | 95 mOhms |
| Rise Time: | 6 ns, 13 ns |
| Series: | FDC6333C |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 19 ns, 11 ns |
| Typical Turn-On Delay Time: | 4.5 ns, 4.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -16 V, +16 V, -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V, 3 V |
| Channel Mode | Enhancement |
| Channel Type | N, P |
| Maximum Continuous Drain Current | 2 A, 2.5 A |
| Maximum Drain Source Resistance | 150 mΩ, 220 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -25 V, -16 V, +16 V, +25 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 960 mW |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SOT-23 |
| Pin Count | 6 |
| Series | PowerTrench |
| Transistor Configuration | Isolated |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 4.1 nC @ 10 V, 4.7 nC @ 10 V |
| Width | 1.7mm |
| Вес, г | 1 |