FDN5630, Транзистор N-MOSFET, полевой, 60В, 1,7А, 500мВт, SuperSOT-3
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Описание
Описание Транзистор N-MOSFET, полевой, 60В, 1,7А, 500мВт, SuperSOT-3
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 6 ns |
| Forward Transconductance - Min | 6 S |
| Height | 1.12 mm |
| Id - Continuous Drain Current | 1.7 A |
| Length | 2.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SSOT-3 |
| Packaging | Reel |
| Part # Aliases | FDN5630_NL |
| Pd - Power Dissipation | 500 mW(1/2 W) |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 73 mOhms |
| Rise Time | 6 ns |
| RoHS | Details |
| Series | FDN5630 |
| Technology | Si |
| Tradename | PowerTrench |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 15 ns |
| Typical Turn-On Delay Time | 10 ns |
| Unit Weight | 0.001058 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 1.4 mm |
| Case | SuperSOT-3 |
| Drain current | 1.7A |
| Drain-source voltage | 60V |
| Features of semiconductor devices | logic level |
| Gate charge | 10nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting | SMD |
| On-state resistance | 0.18Ω |
| Polarisation | unipolar |
| Power dissipation | 0.5W |
| Type of transistor | N-MOSFET |
| Вес, г | 0.03 |
Техническая документация
Datasheet
pdf, 226 КБ
Документация
pdf, 244 КБ