DMN61D8LVTQ-7, Транзистор: N-MOSFET
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от 150 шт. —
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5 шт.
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Описание
60V 630mA 1.8Ω@150mA,5V 820mW 2V@1mA 2 N-Channel TSOT-26 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 630mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.8Ω@150mA, 5V |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@1mA |
| Input Capacitance (Ciss@Vds) | 12.9pF@12V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 820mW |
| Total Gate Charge (Qg@Vgs) | 740pC@5V |
| Type | 2 N-Channel |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 440 ns |
| Forward Transconductance - Min: | 80 mS |
| Id - Continuous Drain Current: | 630 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | TSOT-26-6 |
| Pd - Power Dissipation: | 1.09 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 740 pC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 1.1 Ohms |
| Rise Time: | 301 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 582 ns |
| Typical Turn-On Delay Time: | 131 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 334 КБ
Datasheet DMN61D8L-7
pdf, 471 КБ