DMT10H010LPS-13, Транзистор N-MOSFET, полевой, 100В, 98А, 1,2Вт, PowerDI®5060-8
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см. техническую документацию
см. техническую документацию
1 410 ֏
от 10 шт. —
970 ֏
от 30 шт. —
830 ֏
от 100 шт. —
710 ֏
1 шт.
на сумму 1 410 ֏
Описание
Gate Drivers
Diodes Incorporated Gate Drivers cover many applications in power systems and motor drives. These gate drivers act as the interface between the microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.
Diodes Incorporated Gate Drivers cover many applications in power systems and motor drives. These gate drivers act as the interface between the microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Id - Continuous Drain Current: | 9.4 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerDI5060-8 |
| Pd - Power Dissipation: | 139 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 58.4 nC |
| Rds On - Drain-Source Resistance: | 8.3 mOhms |
| Series: | DMT10H010 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | No Lead |
| Maximum Continuous Drain Current (A) | 9.4 |
| Maximum Drain Source Resistance (mOhm) | 8.3@10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1200 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Product Category | Power MOSFET |
| Supplier Package | PowerDI EP |
| Supplier Temperature Grade | Automotive |
| Typical Fall Time (ns) | 22 |
| Typical Gate Charge @ 10V (nC) | 53.7 |
| Typical Gate Charge @ Vgs (nC) | 53.7@10V |
| Typical Input Capacitance @ Vds (pF) | 2592@50V |
| Typical Rise Time (ns) | 14.1 |
| Typical Turn-Off Delay Time (ns) | 42.9 |
| Typical Turn-On Delay Time (ns) | 11.6 |
| Вес, г | 0.31 |