DMP3026SFDE-7, Транзистор: P-MOSFET
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Описание
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 26 ns |
Id - Continuous Drain Current: | 8.7 A |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | U-DFN2020-6 |
Pd - Power Dissipation: | 2 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 19.6 nC |
Rds On - Drain-Source Resistance: | 15 mOhms |
Rise Time: | 23 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 34 ns |
Typical Turn-On Delay Time: | 5.3 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 417 КБ