FDS8958A, Транзистор полевой, МОП, n/Транзистор P-МОП, полевой, 30/30В, 7/-5А, 1,6Вт, SO8
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970 ֏
от 10 шт. —
660 ֏
1 шт.
на сумму 970 ֏
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Описание
Описание Транзистор полевой, МОП, n/Транзистор P-МОП, полевой, 30/30В, 7/-5А, 1,6Вт, SO8 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | N-Channel, P-Channel |
| Factory Pack Quantity | 2500 |
| Fall Time | 3 ns, 9 ns |
| Forward Transconductance - Min | 25 S, 10 S |
| Height | 1.75 mm |
| Id - Continuous Drain Current | 7 A |
| Length | 4.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | SO-8 |
| Packaging | Reel |
| Part # Aliases | FDS8958A_NL |
| Pd - Power Dissipation | 2 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 28 mOhms, 52 mOhms |
| Rise Time | 5 ns, 13 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 23 ns, 14 ns |
| Typical Turn-On Delay Time | 8 ns, 7 ns |
| Unit Weight | 0.006596 oz |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 3.9 mm |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 3 ns, 9 ns |
| Forward Transconductance - Min: | 25 S, 10 S |
| Id - Continuous Drain Current: | 7 A, 5 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Part # Aliases: | FDS8958A_NL |
| Pd - Power Dissipation: | 2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 16 nC, 13 nC |
| Rds On - Drain-Source Resistance: | 28 mOhms, 52 mOhms |
| Rise Time: | 5 ns, 13 ns |
| Series: | FDS8958A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 23 ns, 14 ns |
| Typical Turn-On Delay Time: | 8 ns, 7 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V, 3 V |
| Maximum Power Dissipation | 2 W |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SOIC |
| Pin Count | 8 |
| Вес, г | 0.16 |
Техническая документация
Datasheet
pdf, 596 КБ
Datasheet FDS8958A
pdf, 598 КБ
Документация
pdf, 537 КБ
Datasheet FDS8958A
pdf, 288 КБ