FDP2D3N10C, Транзистор: N-MOSFET
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6 500 ֏
1 шт.
на сумму 6 500 ֏
Описание
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
Технические параметры
| Channel Type | N Channel |
| Drain Source On State Resistance | 0.0021Ом |
| Power Dissipation | 214Вт |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | PowerTrench |
| Максимальная Рабочая Температура | 175 C |
| Монтаж транзистора | Through Hole |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 100В |
| Непрерывный Ток Стока | 222А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 3В |
| Рассеиваемая Мощность | 214Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.0021Ом |
| Стиль Корпуса Транзистора | TO-220 |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Fall Time: | 32 ns |
| Forward Transconductance - Min: | 222 S |
| Id - Continuous Drain Current: | 222 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 214 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 152 nC |
| Rds On - Drain-Source Resistance: | 2.1 mOhms |
| Rise Time: | 35 ns |
| Series: | FDP2D3N10C |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 74 ns |
| Typical Turn-On Delay Time: | 42 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Channel Mode | Enhancement |
| Forward Diode Voltage | 1.3V |
| Maximum Continuous Drain Current | 222 A |
| Maximum Drain Source Resistance | 2.3 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 214 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 108 nC @ 10 V |
| Width | 4.67mm |
| Вес, г | 2 |