DMN3730UFB4-7, Транзистор: N-MOSFET; полевой
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Описание
DMN3730UFB/4 30V N-Ch MOSFETs
Diodes Incorporated DMN3730UFB/4 30V N-Channel MOSFETs are designed to minimize on-state resistance (R DS(ON) ) and conduction loss, and yet maintain superior switching performance. Diodes Inc DMN3730UFB/4 MOSFETs are ideal for high efficiency power management applications such as load switches, portable applications, and power management functions.
Diodes Incorporated DMN3730UFB/4 30V N-Channel MOSFETs are designed to minimize on-state resistance (R DS(ON) ) and conduction loss, and yet maintain superior switching performance. Diodes Inc DMN3730UFB/4 MOSFETs are ideal for high efficiency power management applications such as load switches, portable applications, and power management functions.
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Forward Transconductance - Min: | 40 mS |
| Id - Continuous Drain Current: | 730 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | X2-DFN1006-3 |
| Pd - Power Dissipation: | 690 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Qg - Gate Charge: | 1.6 nC |
| Rds On - Drain-Source Resistance: | 460 mOhms |
| Series: | DMN37 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 450 mV |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | No Lead |
| Maximum Continuous Drain Current (A) | 0.75 |
| Maximum Drain Source Resistance (mOhm) | 460@4.5V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Leakage Current (nA) | 3000 |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Gate Threshold Voltage (V) | 0.95 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 690 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | DFN |
| Supplier Package | X2-DFN |
| Supplier Temperature Grade | Automotive |
| Typical Fall Time (ns) | 13 |
| Typical Gate Charge @ Vgs (nC) | 1.6@4.5V |
| Typical Input Capacitance @ Vds (pF) | 64.3@25V |
| Typical Rise Time (ns) | 2.8 |
| Typical Turn-Off Delay Time (ns) | 38 |
| Typical Turn-On Delay Time (ns) | 3.5 |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 372 КБ
Datasheet DMN3730UFB4-7
pdf, 419 КБ