DGD2190MS8-13, IC GATE DRV HALF-BRIDGE 8SO 2.5K

DGD2190MS8-13, IC GATE DRV HALF-BRIDGE 8SO 2.5K
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см. техническую документацию
1 060 ֏
от 10 шт.880 ֏
от 100 шт.710 ֏
от 500 шт.640 ֏
1 шт. на сумму 1 060 ֏
Номенклатурный номер: 8023230656
Бренд: DIODES INC.

Описание

The DiodesZetex makes a high-voltage/high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration.

Технические параметры

Fall Time 20ns
Logic Type CMOS, TTL
Number of Drivers 2
Output Current 290 mA, 690 mA
Package Type SOIC
Pin Count 8
Brand: Diodes Incorporated
Factory Pack Quantity: Factory Pack Quantity: 2500
Fall Time: 20 ns
Manufacturer: Diodes Incorporated
Maximum Operating Temperature: +125 C
Maximum Turn-Off Delay Time: 200 ns
Maximum Turn-On Delay Time: 200 ns
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Number of Drivers: 2 Driver
Number of Outputs: 2 Output
Operating Supply Current: 75 uA
Output Current: 4.5 A
Package / Case: SOIC-8
Pd - Power Dissipation: 0.625 W
Product Category: Gate Drivers
Product Type: Gate Drivers
Product: IGBT, MOSFET Gate Drivers
Rise Time: 25 ns
Shutdown: No Shutdown
Subcategory: PMIC-Power Management ICs
Supply Voltage - Max: 20 V
Supply Voltage - Min: 10 V
Technology: Si
Type: High-Side, Low-Side

Техническая документация

Datasheet
pdf, 736 КБ
Datasheet
pdf, 676 КБ