DMN53D0LV-7, Транзистор: N-MOSFET x2
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см. техническую документацию
см. техническую документацию
530 ֏
от 10 шт. —
357 ֏
от 30 шт. —
322 ֏
1 шт.
на сумму 530 ֏
Описание
The DiodesZetex makes a dual N-channel MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 350 mA |
| Maximum Drain Source Resistance | 4.5 Ω |
| Maximum Drain Source Voltage | 50 V |
| Maximum Gate Threshold Voltage | 1.5V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SOT-563 |
| Pin Count | 6 |
| Maximum Gate Source Voltage | 1.5 V |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 11 ns |
| Id - Continuous Drain Current: | 350 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOT563-6 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 430 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 600 pC |
| Rds On - Drain-Source Resistance: | 1.6 Ohms |
| Rise Time: | 2.5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 19 ns |
| Typical Turn-On Delay Time: | 2.7 ns |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Вес, г | 1 |