2DC4617QLP-7B, 50V 400mW 120@1mA,6V 100mA NPN DFN-3(1x0.6) BIpolar TransIstors - BJT
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см. техническую документацию
см. техническую документацию
49 ֏
Кратность заказа 10 шт.
10 шт.
на сумму 490 ֏
Описание
Automotive Bipolar Junction Transistors (BJT)
Diodes Incorporated Automotive Bipolar Junction Transistors (BJT) are highly-reliable, AEC-Q101 qualified transistors that meet the demands of the automotive industry. These BJTs come with the leading-edge silicon technology that gives the best-in-class saturation voltage performance with respect to the footprint. The automotive BJTs provide high minimum gains that help to reduce the base current requirements and assist in faster switching. These BJTs are the Production Part Approval Process (PPAP) supported.
Diodes Incorporated Automotive Bipolar Junction Transistors (BJT) are highly-reliable, AEC-Q101 qualified transistors that meet the demands of the automotive industry. These BJTs come with the leading-edge silicon technology that gives the best-in-class saturation voltage performance with respect to the footprint. The automotive BJTs provide high minimum gains that help to reduce the base current requirements and assist in faster switching. These BJTs are the Production Part Approval Process (PPAP) supported.
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 50 V |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 200 mV |
| Configuration: | Single |
| Continuous Collector Current: | 100 mA |
| DC Collector/Base Gain hFE Min: | 120 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 10000 |
| Gain Bandwidth Product fT: | 100 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package/Case: | DFN1006-3 |
| Pd - Power Dissipation: | 250 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Qualification: | AEC-Q101 |
| Series: | 2DC46 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Вес, г | 0.02 |
Техническая документация
Datasheet 2DC4617QLP-7
pdf, 346 КБ