RD3L150SNTL1, Транзистор: N-MOSFET
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см. техническую документацию
см. техническую документацию
2509 шт., срок 5-6 недель
1 020 ֏
от 10 шт. —
620 ֏
от 30 шт. —
510 ֏
от 100 шт. —
403 ֏
1 шт.
на сумму 1 020 ֏
Альтернативные предложения1
Описание
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.
ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 15 A |
| Maximum Drain Source Resistance | 51 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 20 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Series | RD3L150SN |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V |
| Width | 6.4mm |
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 15 ns |
| Forward Transconductance - Min: | 7 S |
| Id - Continuous Drain Current: | 15 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Part # Aliases: | RD3L150SN |
| Pd - Power Dissipation: | 20 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 18 nC |
| Rds On - Drain-Source Resistance: | 40 mOhms |
| Rise Time: | 30 ns |
| Series: | RD3L |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 45 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 1 |
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 25 августа1 | бесплатно |
| HayPost | 28 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг