DMP34M4SPS-13, MOSFET P-CH 30V 135A PWRDI5060-8
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см. техническую документацию
см. техническую документацию
930 ֏
от 10 шт. —
750 ֏
от 100 шт. —
590 ֏
от 500 шт. —
550 ֏
1 шт.
на сумму 930 ֏
Описание
This new generation MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 21 A |
| Maximum Drain Source Resistance | 6 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | ±25 V |
| Maximum Gate Threshold Voltage | 2.6V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 3 W |
| Minimum Gate Threshold Voltage | 1.6V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | PowerDI5060-8 |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 127 nC @ 10V |
| Width | 5.1mm |
| Вес, г | 0.41 |
Техническая документация
Datasheet
pdf, 466 КБ