RSU002P03T106, MOSFET P-CH 30V 250MA UMT3
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
482 шт., срок 8-10 недель
66 ֏
Мин. кол-во для заказа 14 шт.
от 100 шт. —
62 ֏
14 шт.
на сумму 924 ֏
Альтернативные предложения2
Описание
30V 200mA 900mΩ@10V,200mA 200mW 2.5V@1mA P Channel SOT-323-3 MOSFETs ROHS
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 250 mA |
| Maximum Drain Source Resistance | 1.4 Ω |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 200 mW |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-323 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Width | 1.25mm |
| Continuous Drain Current (Id) | 200mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 900mΩ@10V, 200mA |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@1mA |
| Input Capacitance (Ciss@Vds) | 30pF@10V |
| Operating Temperature | - |
| Power Dissipation (Pd) | 200mW |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF@10V |
| Total Gate Charge (Qg@Vgs) | - |
| Type | P Channel |
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 5 ns |
| Forward Transconductance - Min: | 0.2 S |
| Id - Continuous Drain Current: | 200 mA |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-323-3 |
| Part # Aliases: | RSU002P03 |
| Pd - Power Dissipation: | 200 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Rds On - Drain-Source Resistance: | 1.6 Ohms |
| Rise Time: | 5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 30 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Техническая документация
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 18 сентября1 | бесплатно |
| HayPost | 22 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг