DTC114EMT2L, TRANS PREBIAS NPN 150MW VMT3

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50510 шт., срок 8-10 недель

27 ֏

Мин. кол-во для заказа 34 шт.

от 500 шт. — 21 ֏

от 2000 шт. — 19 ֏

34 шт. на сумму 918 ֏

Альтернативные предложения5

Номенклатурный номер: 8024242020

Бренд: Rohm

Описание Транзистор: NPN Характеристики

Base Part Number	DTC114
Current - Collector (Ic) (Max)	50mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V
Frequency - Transition	250MHz
Manufacturer	Rohm Semiconductor
Mounting Type	Surface Mount
Package / Case	SOT-723
Packaging	Cut Tape(CT)
Part Status	Active
Power - Max	150mW
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Series	-
Supplier Device Package	VMT3
Transistor Type	NPN-Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300mV @ 500ВµA, 10mA
Voltage - Collector Emitter Breakdown (Max)	50V
Collector Current (Ic)	50mA
Collector Cut-Off Current (Icbo)	500nA
Collector-Emitter Breakdown Voltage (Vceo)	50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	300mV@500uA, 10mA
DC Current Gain (hFE@Ic,Vce)	30@5mA, 5V
Power Dissipation (Pd)	150mW
Transition Frequency (fT)	250MHz
Base-Emitter Resistor	47kΩ
Maximum Collector Emitter Voltage	50 V
Maximum DC Collector Current	100 mA
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	150 mW
Minimum DC Current Gain	30
Number of Elements per Chip	1
Package Type	SC-105AA
Pin Count	3
Transistor Configuration	Single
Typical Input Resistor	47 kΩ
Typical Resistor Ratio	1