2SD1898T100R, TRANS NPN 80V 1A MPT3
1000 шт., срок 8-10 недель
115 ֏
Кратность заказа 10 шт.
от 100 шт. —
93 ֏
от 500 шт. —
84 ֏
от 1000 шт. —
76 ֏
10 шт.
на сумму 1 150 ֏
Альтернативные предложения1
Описание
Биполярные транзисторы - BJT NPN 80V 1A
Технические параметры
| Base Product Number | 2SD1898 -> |
| Current - Collector (Ic) (Max) | 1A |
| Current - Collector Cutoff (Max) | 1ВµA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 3V |
| ECCN | EAR99 |
| Frequency - Transition | 100MHz |
| HTSUS | 8541.29.0075 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | TO-243AA |
| Power - Max | 2W |
| REACH Status | REACH Affected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | MPT3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Brand | ROHM Semiconductor |
| Collector- Base Voltage VCBO | 120 V |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Configuration | Single |
| Continuous Collector Current | 1 A |
| DC Collector/Base Gain Hfe Min | 82 |
| DC Current Gain HFE Max | 390 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 1000 |
| Gain Bandwidth Product FT | 100 MHz |
| Manufacturer | ROHM Semiconductor |
| Maximum DC Collector Current | 1 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 500 mW |
| Product Category | Bipolar Transistors-BJT |
| Product Type | BJTs-Bipolar Transistors |
| Series | 2SD1898 |
| Subcategory | Transistors |
| Transistor Polarity | NPN |
| Brand: | ROHM Semiconductor |
| Collector- Base Voltage VCBO: | 120 V |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| Collector-Emitter Saturation Voltage: | 150 mV |
| Configuration: | Single |
| Continuous Collector Current: | 1 A |
| DC Collector/Base Gain hfe Min: | 82 |
| DC Current Gain hFE Max: | 390 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Gain Bandwidth Product fT: | 100 MHz |
| Manufacturer: | ROHM Semiconductor |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | 2SD1898 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Collector Current (Ic) | 1A |
| Collector Cut-Off Current (Icbo) | 1uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 80V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 150mV@500mA, 20mA |
| DC Current Gain (hFE@Ic,Vce) | 180@500mA, 3V |
| Power Dissipation (Pd) | 2W |
| Transition Frequency (fT) | 100MHz |
Техническая документация
Datasheet 2SD1898T100Q
pdf, 374 КБ
Datasheet 2SD1898T100R
pdf, 465 КБ
Datasheet 2SD1898T100R
pdf, 1547 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 18 сентября1 | бесплатно |
| HayPost | 22 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг