RTR025N03TL, MOSFET N-CH 30V 2.5A TSMT3
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
34 шт., срок 8-10 недель
97 ֏
Мин. кол-во для заказа 9 шт.
от 10 шт. —
93 ֏
9 шт.
на сумму 873 ֏
Альтернативные предложения3
Описание
30V 2.5A 92m-@4.5V,2.5A 1W 1.5V@1mA N Channel TSMT-3 MOSFETs
Технические параметры
| Brand | ROHM Semiconductor |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 10 ns |
| Height | 0.85 mm |
| Id - Continuous Drain Current | 2.5 A |
| Length | 2.9 mm |
| Manufacturer | ROHM Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 1 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 950 mOhms |
| Rise Time | 15 ns |
| RoHS | Details |
| Series | RTR025N03 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 25 ns |
| Typical Turn-On Delay Time | 9 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 12 V |
| Width | 1.6 mm |
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 10 ns |
| Id - Continuous Drain Current: | 2.5 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-346T-3 |
| Part # Aliases: | RTR025N03 |
| Pd - Power Dissipation: | 1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 3.3 nC |
| Rds On - Drain-Source Resistance: | 950 mOhms |
| Rise Time: | 15 ns |
| Series: | RTR025N03 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 25 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 18 сентября1 | бесплатно |
| HayPost | 22 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг