FDMA430NZ
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см. техническую документацию
см. техническую документацию
970 ֏
от 2 шт. —
620 ֏
от 4 шт. —
401 ֏
1 шт.
на сумму 970 ֏
Описание
Электроэлемент
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0236ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:810mV; Power Dissipation Pd:90
Технические параметры
Channel Mode | Enhancement |
Maximum Continuous Drain Current | 5A |
Maximum Drain Source Resistance | 40m? |
Maximum Drain Source Voltage | 30V |
Maximum Gate Source Voltage | ±12V |
Minimum Operating Temperature | -55°C |
Number of Elements per Chip | 1 |
Pin Count | 6 |
Product Height | 0.95mm |
Product Length | 2mm |
Product Width | 2mm |
Supplier Package | MLP EP |
Typical Fall Time | 6ns |
Typical Gate Charge @ Vgs | 7.3nC |
Typical Input Capacitance @ Vds | 600pF |
Typical Rise Time | 7.1ns |
Typical Turn-Off Delay Time | 18.1ns |
Typical Turn-On Delay Time | 8.3ns |
конфигурация | Single; Quad Drain |
максимальная рабочая температура | 150°C |
Максимальная рассеиваемая мощность | 900mW |
монтаж (установка) | Surface Mount |
разрешение | Power MOSFET |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 2.4 W |
Mounting Type | Surface Mount |
Package Type | MicroFET 2x2 |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 7.1 ns |
Id - Continuous Drain Current: | 5 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | MicroFET-6 |
Pd - Power Dissipation: | 900 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signal |
Qg - Gate Charge: | 11 nC |
Rds On - Drain-Source Resistance: | 40 mOhms |
Rise Time: | 7.1 ns |
Series: | FDMA430NZ |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | PowerTrench |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 18.1 ns |
Typical Turn-On Delay Time: | 8.3 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -12 V, +12 V |
Vgs th - Gate-Source Threshold Voltage: | 600 mV |
Техническая документация
Datasheet
pdf, 407 КБ
Документация
pdf, 520 КБ