FDB2710, Транзистор N-MOSFET, полевой, 250В, 50А, 260Вт, D2PAK
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см. техническую документацию
см. техническую документацию
5 300 ֏
1 шт.
на сумму 5 300 ֏
Описание
250V 50A 42.5mΩ@25A,10V 260W 5V@250uA null D2PAK-3 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 50A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 42.5mΩ@25A, 10V |
| Drain Source Voltage (Vdss) | 250V |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
| Input Capacitance (Ciss@Vds) | 7.28nF@25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 260W |
| Total Gate Charge (Qg@Vgs) | 101nC@10V |
| Type | null |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 800 |
| Fall Time: | 154 ns |
| Forward Transconductance - Min: | 63 S |
| Id - Continuous Drain Current: | 50 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | D2PAK-3(TO-263-3) |
| Pd - Power Dissipation: | 260 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 101 nC |
| Rds On - Drain-Source Resistance: | 36.3 mOhms |
| Rise Time: | 252 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 112 ns |
| Typical Turn-On Delay Time: | 80 ns |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 2.34 |