FDD10AN06A0, Транзистор N-MOSFET, полевой, 60В, 50А, 135Вт, DPAK, PowerTrench®
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см. техническую документацию
см. техническую документацию
1 900 ֏
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Описание
Полевые МОП-транзисторы Fairchild PowerTrench
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 32 ns |
| Id - Continuous Drain Current: | 50 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DPAK-3 |
| Part # Aliases: | FDD10AN06A0_NL |
| Pd - Power Dissipation: | 135 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 37 nC |
| Rds On - Drain-Source Resistance: | 9.4 mOhms |
| Rise Time: | 79 ns |
| Series: | FDD10AN06A0 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 32 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Case | DPAK |
| Drain current | 50A |
| Drain-source voltage | 60V |
| Gate charge | 4.6nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | ONSEMI |
| Mounting | SMD |
| On-state resistance | 27mΩ |
| Polarisation | unipolar |
| Power dissipation | 135W |
| Technology | PowerTrench® |
| Type of transistor | N-MOSFET |
| Вес, г | 0.39 |
Техническая документация
Datasheet
pdf, 439 КБ