RZM002P02T2L, MOSFET P-CH 20V 200MA VMT3
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см. техническую документацию
см. техническую документацию
8000 шт., срок 8-10 недель
44 ֏
Мин. кол-во для заказа 19 шт.
от 100 шт. —
40 ֏
от 500 шт. —
38 ֏
от 1000 шт. —
36 ֏
19 шт.
на сумму 836 ֏
Альтернативные предложения5
Описание
Канал P 20 В 200 мА (Ta) 150 мВт (Ta) Поверхностный монтаж VMT3
Технические параметры
| Base Product Number | RZM002 -> |
| Current - Continuous Drain (Id) @ 25В°C | 200mA (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| ECCN | EAR99 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4.5V |
| HTSUS | 8541.21.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 115pF @ 10V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150В°C (TJ) |
| Other Related Documents | http://rohmfs.rohm.com/en/techdata_basic/transisto |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | SOT-723 |
| Power Dissipation (Max) | 150mW (Ta) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 200mA, 4.5V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Simulation Models | http://rohmfs.rohm.com/en/products/library/spice/d |
| Supplier Device Package | VMT3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±10V |
| Vgs(th) (Max) @ Id | 1V @ 100ВµA |
| Continuous Drain Current (Id) @ 25В°C | 200mA |
| Power Dissipation-Max (Ta=25В°C) | 150mW |
| Rds On - Drain-Source Resistance | 1.2О© @ 200mA,4.5V |
| Transistor Polarity | P Channel |
| Vds - Drain-Source Breakdown Voltage | 20V |
| Vgs - Gate-Source Voltage | 1V @ 100uA |
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 8000 |
| Fall Time: | 17 ns |
| Id - Continuous Drain Current: | 200 mA |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-723-3 |
| Part # Aliases: | RZM002P02 |
| Pd - Power Dissipation: | 150 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 1.4 nC |
| Rds On - Drain-Source Resistance: | 1.2 Ohms |
| Rise Time: | 4 ns |
| Series: | RZM002P02 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel MOSFET |
| Typical Turn-Off Delay Time: | 17 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 300 mV |
| Brand | ROHM Semiconductor |
| Factory Pack Quantity | 8000 |
| Fall Time | 17 ns |
| Id - Continuous Drain Current | -200 mA |
| Manufacturer | ROHM Semiconductor |
| Mounting Style | SMD/SMT |
| Packaging | Reel |
| Pd - Power Dissipation | 150 mW |
| Product Category | MOSFET |
| Qg - Gate Charge | 1.4 nC |
| Rise Time | 4 ns |
| RoHS | Details |
| Series | RZM002P02 |
| Typical Turn-Off Delay Time | 17 ns |
| Typical Turn-On Delay Time | 6 ns |
| Vgs th - Gate-Source Threshold Voltage | -1 V |
| Continuous Drain Current (Id) | 200mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.2Ω@4.5V, 200mA |
| Drain Source Voltage (Vdss) | 20V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@100uA |
| Input Capacitance (Ciss@Vds) | 115pF@10V |
| Power Dissipation (Pd) | 150mW |
| Total Gate Charge (Qg@Vgs) | 1.4nC@4.5V |
| Type | 1PCSPChannel |
Техническая документация
Datasheet RZM002P02T2L
pdf, 2186 КБ
Документация
pdf, 2186 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 18 сентября1 | бесплатно |
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