FDS6875, Транзистор: P-MOSFET x2, полевой, -20В, -6А, 1,6Вт, SO8
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Описание
Описание Транзистор: P-MOSFET x2, полевой, -20В, -6А, 1,6Вт, SO8 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 6(A) |
| Drain-Source On-Volt | 20(V) |
| Gate-Source Voltage (Max) | '±8(V) |
| Mounting | Surface Mount |
| Number of Elements | 2 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | SOIC |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Polarity | P |
| Power Dissipation | 2(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Case | SO8 |
| Drain current | -6A |
| Drain-source voltage | -20V |
| Gate charge | 31nC |
| Gate-source voltage | ±8V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | ONSEMI |
| On-state resistance | 48mΩ |
| Polarisation | unipolar |
| Technology | PowerTrench® |
| Type of transistor | P-MOSFET x2 |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 35 ns |
| Forward Transconductance - Min: | 22 S |
| Id - Continuous Drain Current: | 6 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Part # Aliases: | FDS6875_NL |
| Pd - Power Dissipation: | 2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 31 nC |
| Rds On - Drain-Source Resistance: | 24 mOhms |
| Rise Time: | 15 ns |
| Series: | FDS6875 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 2 P-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 98 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Вес, г | 0.16 |