DMS2085LSD-13, Транзистор: P-MOSFET
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Описание
Trans MOSFET P-CH 20V 3.3A 8-Pin SO T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Dual Drain |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 3.3 |
| Maximum Drain Source Resistance (mOhm) | 85@10V |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1800 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | SO |
| Typical Fall Time (ns) | 6.8 |
| Typical Gate Charge @ 10V (nC) | 7.8 |
| Typical Gate Charge @ Vgs (nC) | 3.7@4.5V|7.8@10V |
| Typical Input Capacitance @ Vds (pF) | 353@15V |
| Typical Rise Time (ns) | 3 |
| Typical Turn-Off Delay Time (ns) | 14 |
| Typical Turn-On Delay Time (ns) | 3.3 |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 637 КБ