FDC8602, Транзистор: N-MOSFET
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1 410 ֏
от 10 шт. —
1 060 ֏
от 30 шт. —
970 ֏
1 шт.
на сумму 1 410 ֏
Описание
TSOT-23-6 MOSFETs ROHS
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 1.2A |
| Drain to Source Voltage (Vdss) | 100V |
| FET Feature | Standard |
| FET Type | 2 N-Channel(Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 50V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power - Max | 690mW |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 1.2A, 10V |
| Series | PowerTrenchВ® |
| Supplier Device Package | SuperSOTв(ў-6 |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 1.2 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | SSOT-6 |
| Pd - Power Dissipation: | 690 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 2 nC |
| Rds On - Drain-Source Resistance: | 350 mOhms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 0.1 |