FDMC86183, Транзистор: N-MOSFET
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см. техническую документацию
см. техническую документацию
1 500 ֏
от 10 шт. —
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1 060 ֏
1 шт.
на сумму 1 500 ֏
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 3 ns |
| Forward Transconductance - Min: | 20 S |
| Id - Continuous Drain Current: | 47 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | Power-33-8 |
| Pd - Power Dissipation: | 52 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 21 nC |
| Rds On - Drain-Source Resistance: | 11 mOhms |
| Rise Time: | 3 ns |
| Series: | FDMC86183 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 15 ns |
| Typical Turn-On Delay Time: | 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 396 КБ