AFGHL75T65SQDC, 375W 80A 650V Trench FIeld Stop TO-247-3 IGBTs

Фото 1/2 AFGHL75T65SQDC, 375W 80A 650V Trench FIeld Stop TO-247-3 IGBTs
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см. техническую документацию
12 400 ֏
от 10 шт.10 100 ֏
от 30 шт.9 000 ֏
1 шт. на сумму 12 400 ֏
Номенклатурный номер: 8024987927

Описание

AFGHL75T65SQD Field Stop Trench IGBT
onsemi AFGHL75T65SQD Field Stop Trench IGBT offers 4th generation high-speed IGBT technology. The AFGHL75T65SQD is AEC-Q101 qualified and provides the optimum performance for both hard and soft-switching topology in automotive applications. Additionally, the onsemi AFGHL75T65SQD Field Stop Trench IGBT features high current capability, fast switching, and tight parameter distribution.

Технические параметры

Brand: onsemi
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.6 V
Configuration: Single
Continuous Collector Current at 25 C: 80 A
Continuous Collector Current Ic Max: 80 A
Factory Pack Quantity: Factory Pack Quantity: 450
Gate-Emitter Leakage Current: 400 nA
Manufacturer: onsemi
Maximum Gate Emitter Voltage: -20 V, 20 V
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Pd - Power Dissipation: 375 W
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Subcategory: IGBTs
Technology: SiC
Channel Type N
Maximum Collector Emitter Voltage 650 V
Maximum Continuous Collector Current 75 A
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 375 W
Number of Transistors 1
Package Type TO-247
Pin Count 3
Transistor Configuration Single
Вес, г 7.4

Техническая документация

Datasheet
pdf, 409 КБ
Datasheet
pdf, 255 КБ