AFGHL75T65SQDC, 375W 80A 650V Trench FIeld Stop TO-247-3 IGBTs
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12 400 ֏
от 10 шт. —
10 100 ֏
от 30 шт. —
9 000 ֏
1 шт.
на сумму 12 400 ֏
Описание
AFGHL75T65SQD Field Stop Trench IGBT
onsemi AFGHL75T65SQD Field Stop Trench IGBT offers 4th generation high-speed IGBT technology. The AFGHL75T65SQD is AEC-Q101 qualified and provides the optimum performance for both hard and soft-switching topology in automotive applications. Additionally, the onsemi AFGHL75T65SQD Field Stop Trench IGBT features high current capability, fast switching, and tight parameter distribution.
onsemi AFGHL75T65SQD Field Stop Trench IGBT offers 4th generation high-speed IGBT technology. The AFGHL75T65SQD is AEC-Q101 qualified and provides the optimum performance for both hard and soft-switching topology in automotive applications. Additionally, the onsemi AFGHL75T65SQD Field Stop Trench IGBT features high current capability, fast switching, and tight parameter distribution.
Технические параметры
Brand: | onsemi |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.6 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 80 A |
Continuous Collector Current Ic Max: | 80 A |
Factory Pack Quantity: Factory Pack Quantity: | 450 |
Gate-Emitter Leakage Current: | 400 nA |
Manufacturer: | onsemi |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 375 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Subcategory: | IGBTs |
Technology: | SiC |
Channel Type | N |
Maximum Collector Emitter Voltage | 650 V |
Maximum Continuous Collector Current | 75 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 375 W |
Number of Transistors | 1 |
Package Type | TO-247 |
Pin Count | 3 |
Transistor Configuration | Single |
Вес, г | 7.4 |