BSS138, МОП-Транзистор 50 В 220 мА 3,5 Ом при 10 В, 220 мА 360мВт N-канальные МОП-Транзистор SOT-23(TO-236)
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см. техническую документацию
см. техническую документацию
110 ֏
Кратность заказа 5 шт.
от 50 шт. —
75 ֏
от 150 шт. —
58 ֏
от 500 шт. —
49 ֏
5 шт.
на сумму 550 ֏
Описание
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology.
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 9 ns |
| Forward Transconductance - Min | 0.5 S |
| Height | 1.2 mm |
| Id - Continuous Drain Current | 220 mA |
| Length | 2.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Part # Aliases | BSS138_NL |
| Pd - Power Dissipation | 360 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 3.5 Ohms |
| Rise Time | 9 ns |
| RoHS | Details |
| Series | BSS138 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 20 ns |
| Typical Turn-On Delay Time | 2.5 ns |
| Unit Weight | 0.001129 oz |
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 1.3 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 220 mA |
| Maximum Drain Source Resistance | 3.5 Ω |
| Maximum Drain Source Voltage | 50 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 360 mW |
| Minimum Gate Threshold Voltage | 0.8V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 1.7 nC @ 10 V |
| Automotive | No |
| ECCN (US) | EAR99 |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 0.22 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.22 |
| Maximum Diode Forward Voltage (V) | 1.4 |
| Maximum Drain Source Resistance (mOhm) | 3500@10V |
| Maximum Drain Source Voltage (V) | 50 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Maximum IDSS (uA) | 0.5 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 350 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 360 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.36 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 0.88 |
| Minimum Gate Threshold Voltage (V) | 0.8 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Operating Junction Temperature (°C) | -55 to 150 |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Process Technology | DMOS |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Fall Time (ns) | 7 |
| Typical Gate Charge @ 10V (nC) | 1.7 |
| Typical Gate Charge @ Vgs (nC) | 1.7@10V |
| Typical Gate Plateau Voltage (V) | 2 |
| Typical Gate Threshold Voltage (V) | 1.3 |
| Typical Gate to Drain Charge (nC) | 0.4 |
| Typical Gate to Source Charge (nC) | 0.1 |
| Typical Input Capacitance @ Vds (pF) | 27@25V |
| Typical Output Capacitance (pF) | 13 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 6@25V |
| Typical Rise Time (ns) | 9 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Typical Turn-On Delay Time (ns) | 2.5 |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 7 ns |
| Forward Transconductance - Min: | 0.12 S |
| Id - Continuous Drain Current: | 220 mA |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | BSS138_NL |
| Pd - Power Dissipation: | 360 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Qg - Gate Charge: | 1.7 nC |
| Rds On - Drain-Source Resistance: | 3.5 Ohms |
| Rise Time: | 9 ns |
| Series: | BSS138 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 20 ns |
| Typical Turn-On Delay Time: | 2.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
| Continuous Drain Current | 0.2(A) |
| Drain-Source On-Volt | 50(V) |
| Gate-Source Voltage (Max) | ±20(V) |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Polarity | N |
| Power Dissipation | 0.225(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Вес, г | 0.03 |