BSS123, MOSFET, Single - N-Channel, 100V, 170mA, SOT-23
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
132 ֏
Мин. кол-во для заказа 5 шт.
5 шт.
на сумму 660 ֏
Посмотреть аналоги3
Описание
Voltage Regulators
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.
Технические параметры
Brand | ON Semiconductor/Fairchild |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 9 ns |
Forward Transconductance - Min | 0.8 S |
Height | 1.2 mm |
Id - Continuous Drain Current | 170 mA |
Length | 2.9 mm |
Manufacturer | ON Semiconductor |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SOT-23-3 |
Packaging | Reel |
Part # Aliases | BSS123_NL |
Pd - Power Dissipation | 360 mW |
Product | MOSFET Small Signal |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 6 Ohms |
Rise Time | 9 ns |
RoHS | Details |
Series | BSS123 |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | FET |
Typical Turn-Off Delay Time | 17 ns |
Typical Turn-On Delay Time | 1.7 ns |
Vds - Drain-Source Breakdown Voltage | 100 V |
Vgs - Gate-Source Voltage | 20 V |
Width | 1.3 mm |
Channel Type | N |
Maximum Continuous Drain Current | 170 mA |
Maximum Drain Source Resistance | 6 Ω |
Maximum Drain Source Voltage | 100 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 360 mW |
Minimum Gate Threshold Voltage | 0.8V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-23 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 1.8 nC @ 10 V |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 9 ns |
Forward Transconductance - Min: | 0.8 S |
Id - Continuous Drain Current: | 170 mA |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | SOT-23-3 |
Part # Aliases: | BSS123_NL |
Pd - Power Dissipation: | 300 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signals |
Qg - Gate Charge: | 2.5 nC |
Rds On - Drain-Source Resistance: | 6 Ohms |
Rise Time: | 9 ns |
Series: | BSS123 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | FET |
Typical Turn-Off Delay Time: | 17 ns |
Typical Turn-On Delay Time: | 1.7 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 800 mV |
Вес, г | 0.01 |
Техническая документация
BSS123
pdf, 145 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 195 КБ
Документация
pdf, 271 КБ
BSS123
pdf, 177 КБ