DMP1005UFDF-7, 12V 26A 2.1W 8.5mOhm@4.5V,5A P Channel UDFN2020-6-EP MOSFETs
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см. техническую документацию
см. техническую документацию
317 ֏
Кратность заказа 5 шт.
от 50 шт. —
198 ֏
от 150 шт. —
168 ֏
от 500 шт. —
135 ֏
5 шт.
на сумму 1 585 ֏
Описание
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Технические параметры
Channel Mode | Enhancement |
Channel Type | P |
Forward Diode Voltage | 1.2V |
Maximum Continuous Drain Current | 12.8 A |
Maximum Drain Source Resistance | 18.5 mΩ |
Maximum Drain Source Voltage | 12 V |
Maximum Gate Source Voltage | ±8 V |
Maximum Gate Threshold Voltage | 1V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 2.1 W |
Minimum Gate Threshold Voltage | 0.3V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | U-DFN2020 |
Pin Count | 6 |
Transistor Configuration | Single |
Typical Gate Charge @ Vgs | 47 nC @ 8V |
Width | 2.05mm |
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 125 ns |
Id - Continuous Drain Current: | 26 A |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | U-DFN2020-6 |
Pd - Power Dissipation: | 2.1 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 47 nC |
Rds On - Drain-Source Resistance: | 5.8 mOhms |
Rise Time: | 21 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 140 ns |
Typical Turn-On Delay Time: | 6.1 ns |
Vds - Drain-Source Breakdown Voltage: | 12 V |
Vgs - Gate-Source Voltage: | -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Вес, г | 0.02 |