FFSP1065A, TO-220-2 Schottky BarrIer DIodes (SBD)
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см. техническую документацию
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3 740 ֏
от 10 шт. —
3 220 ֏
от 50 шт. —
2 990 ֏
от 100 шт. —
2 890 ֏
1 шт.
на сумму 3 740 ֏
Описание
650V EliteSiC (Silicon Carbide) Schottky Diodes onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.
Технические параметры
| Brand: | onsemi |
| Configuration: | Single |
| Factory Pack Quantity: | 800 |
| If - Forward Current: | 10 A |
| Ifsm - Forward Surge Current: | 56 A |
| Ir - Reverse Current: | 200 uA |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-2 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 111 W |
| Product Category: | Schottky Diodes & Rectifiers |
| Product Type: | Schottky Diodes & Rectifiers |
| Product: | Schottky Silicon Carbide Diodes |
| Subcategory: | Diodes & Rectifiers |
| Technology: | SiC |
| Vf - Forward Voltage: | 1.5 V |
| Vr - Reverse Voltage: | 650 V |
| Vrrm - Repetitive Reverse Voltage: | 650 V |
| Вес, г | 2.85 |
Техническая документация
Datasheet
pdf, 296 КБ